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| SMD Type Power transistor 2SB1184 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). PNP silicon transistor. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation(Tc=25 ) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -60 -50 -5 -3 1 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=-50iA IC=-1mA IE=-50iA VCB=-40V VEB=-4V Testconditons Min -60 -50 -5 -1 -1 -1 82 70 50 390 MHz pF Typ Max Unit V V V iA iA V VCE(sat) IC= -2A, IB= -0.2A hFE fT Cob VCE= -3V, IC= -0.5A VCE= -5V, IE=0.5A, f=30MHz VCB= -10V,IE=0A,f=1MHz hFE Classification Rank hFE P 82 180 Q 120 270 R 180 390 3.80 Epitaxial planar type www.kexin.com.cn 1 |
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